FDS4435BZ-F085 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
* Extended VGSS range (-25V) for battery applications
* HBM.

Application

* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS.

Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in .

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